型号 IPD80P03P4L-07
厂商 Infineon Technologies
描述 MOSFET P-CH 30V 80A TO252-3
IPD80P03P4L-07 PDF
代理商 IPD80P03P4L-07
标准包装 1
系列 OptiMOS™
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 80A
开态Rds(最大)@ Id, Vgs @ 25° C 6.8 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大) 2V @ 130µA
闸电荷(Qg) @ Vgs 80nC @ 10V
输入电容 (Ciss) @ Vds 5700pF @ 25V
功率 - 最大 88W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 剪切带 (CT)
产品目录页面 1616 (CN2011-ZH PDF)
其它名称 IPD80P03P4L-07INCT
同类型PDF
IPD80P03P4L-07 Infineon Technologies MOSFET P-CH 30V 80A TO252-3
IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N03S4L-03 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
IPD90N04S3-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD90N04S3-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD90N04S3-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD90N04S3-H4 Infineon Technologies MOSFET N-CH 40V 90A TO252-3
IPD90N04S4-02 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPD90N04S4-03 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPD90N04S4-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPD90N04S4-05 Infineon Technologies MOSFET N-CH 40V 86A TO252-3-313
IPD90N04S4L-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPD90N06S4-04 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
IPD90N06S4-05 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
IPD90N06S4-07 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
IPD90N06S4L-03 Infineon Technologies MOSFET N-CH 60V 90A TO252-3